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CS1010EA8 Datasheet Silicon N-Channel Power MOSFET

Manufacturer: Huajing Microelectronics

Datasheet Details

Part number CS1010EA8
Manufacturer Huajing Microelectronics
File Size 414.67 KB
Description Silicon N-Channel Power MOSFET
Download CS1010EA8 Download (PDF)

General Description

: CS1010E A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

The package form is TO-220AB, which accords with the RoHS standard.

Overview

Silicon N-Channel Power MOSFET CS1010E A8 ○R General.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤12mΩ) l Low Gate Charge (Typical Data:75nC) l Low Reverse transfer capacitances(Typical:75pF) l 100% Single Pulse avalanche energy Test VDSS ID PD (TC=25℃) RDS(ON)Typ 60 V 120 A 230 W 7.5 mΩ.