CS10N60A8R - Silicon N-Channel Power MOSFET

Name: CS10N60A8R
SKU: CS10N60A8R-1083087

Huajing Microelectronics

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Datasheet Details

Part number	CS10N60A8R
Manufacturer	Huajing Microelectronics
File Size	265.92 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS10N60A8R-HuajingMicroelectronics.pdf

CS10N60A8R Product details

Description

CS10N60 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

l Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 V 10 A 130 W 0.68 Ω l Low ON Resistance(Rdson≤0.9Ω) l Low Gate Charge (Typical Data:32nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |