• Part: CS10N60FA9HD
  • Description: Silicon N-Channel Power MOSFET
  • Manufacturer: Huajing Microelectronics
  • Size: 350.71 KB
Download CS10N60FA9HD Datasheet PDF
CS10N60FA9HD page 2
Page 2
CS10N60FA9HD page 3
Page 3

Datasheet Summary

Silicon N-Channel Power MOSFET CS10N60F A9HD ○R General Description: CS10N60F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features : l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:39nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and...