CS10N60A8R Datasheet Silicon N-channel Power MOSFET

Manufacturer: Huajing Microelectronics

Overview: Silicon N-Channel Power MOSFET CS10N60 A8R ○R General.

Datasheet Details

Part number	CS10N60A8R
Manufacturer	Huajing Microelectronics
File Size	265.92 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS10N60A8R-HuajingMicroelectronics.pdf

General Description

： CS10N60 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

The package form is TO-220AB, which accords with the RoHS standard.

Key Features

l Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 V 10 A 130 W 0.68 Ω l Low ON Resistance(Rdson≤0.9Ω) l Low Gate Charge (Typical Data:32nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test.

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