l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 65nC) l Low Reverse transfer capacitances(Typical: 25pF) l 100% Single Pulse avalanche energy.

Power switch circuit of PC POWER. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDM.

CS10N80 A8D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 800 10 160 0.72 performance and enhance the avalanche energ.

CS10N80AND

CS10N80FA9D

CS10N045AE-G

CS10N06BE-G

CS10N15A3

CS10N15A4

CS10N40A4R

CS10N40A8R

CS10N40FA9R

CS10N50A8R

CS10N50FA9R

CS10N60A0R

CS10N60A8HD