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CS12N70A8H - Silicon N-Channel Power MOSFET

General Description

switching performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤0.75Ω) l Low Gate Charge (Typical Data:47nC) l Low Reverse transfer capacitances(Typical:15pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS12N70A8H
Manufacturer Huajing Microelectronics
File Size 222.19 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS12N70A8H Datasheet

Full PDF Text Transcription for CS12N70A8H (Reference)

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Silicon N-Channel Power MOSFET CS12N70 A8H ○R General Description: CS12N70 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technolog...

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l Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features: l Fast Switching l Low ON Resistance(Rdson≤0.75Ω) l Low Gate Charge (Typical Data:47nC) l Low Reverse transfer capacitances(Typical:15pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger.