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Silicon N-Channel Power MOSFET
CS12N60F A9HD
○R
General Description：
CS12N60F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
VDSS ID PD (TC=25℃) RDS(ON)Typ
600 12 55 0.5
switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features：
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:46nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS12N60FA9HD Datasheet
