CS150N04A8 Datasheet - Huajing Microelectronics

Silicon N-Channel Power MOSFET

CS150N04A8 Features

* l Fast Switching l Low ON Resistance(Rdson≤5 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. VDSS ID（Silicon limited current） PD RDS(ON)Typ 40 V 130 A 125 W 3.6 mΩ Absolute（TC= 25℃ unle

CS150N04A8 General Description

CS150N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-22.

CS150N04A8 Datasheet (510.15 KB)

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CS150N04A8

Manufacturer:

Huajing Microelectronics

File Size:

510.15 KB

Description:

Silicon n-channel power mosfet.

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CS150N04A8 Silicon N-Channel Power MOSFET Huajing Microelectronics

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CS150N04A8 Features

CS150N04A8 General Description

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