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CS150N04A8 - Silicon N-Channel Power MOSFET

General Description

CS150N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This device is suitable for use as a load switch and PWM applications.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤5 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS150N04A8
Manufacturer Huajing Microelectronics
File Size 510.15 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS150N04A8 Datasheet

Full PDF Text Transcription for CS150N04A8 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS150N04A8. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET ○R CS150N04 A8 General Description： CS150N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technolog...

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l Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤5 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. VDSS ID（Silicon limited current） PD RDS(ON)Typ 40 V 130 A 125 W 3.

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