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CS1N60C1H - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤10.5Ω).
  • Low Gate Charge (Typical Data: 8.7nC).
  • Low Reverse transfer capacitances(Typical:2.8pF).
  • 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS1N60C1H
Manufacturer Huajing Microelectronics
File Size 614.17 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS1N60C1H Datasheet

Full PDF Text Transcription for CS1N60C1H (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS1N60C1H. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET ○R CS1N60 C1H General Description： CS1N60 C1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology ...

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Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-92, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤10.5Ω)  Low Gate Charge (Typical Data: 8.7nC)  Low Reverse transfer capacitances(Typical:2.8pF)  100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.

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