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CS1N60C1HD Datasheet Silicon N-channel Power MOSFET

Manufacturer: Huajing Microelectronics

Overview: Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS1N60C1HD.

General Description

: CS1N60C1HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.5 3 7.0 performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

The package form is TO-92, which accords with the RoHS standard.

Key Features

  • l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:7.5nC) l Low Reverse transfer capacitances(Typical:5.0pF) l 100% Single Pulse avalanche energy Test.

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