CS1N60A4H Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS1N60 A4H General Description： VDSS CS1N60 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) W which reduce the conduction loss, improve switching RDS(ON)Typ Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:4nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche...