| Part | CS1N60A4H |
|---|---|
| Description | Silicon N-Channel Power MOSFET |
| Category | MOSFET |
| Manufacturer | CR Micro |
| Size | 417.31 KB |
： VDSS 600 V CS1N60 A4H, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 25 W which reduce the conduction loss, improve switching RDS(ON)Typ 11 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
| Part Number | Manufacturer | Description |
|---|---|---|
| CS1N60A3H | Huajing Microelectronics | Silicon N-Channel Power MOSFET |
| CS1N60A1H | Huajing Microelectronics | Silicon N-Channel Power MOSFET |
| CS1N60C3H | Huajing Microelectronics | Silicon N-Channel Power MOSFET |
| CS1N60C1H | Huajing Microelectronics | Silicon N-Channel Power MOSFET |
| CS1N60 | EDN | VDMOS |
