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Silicon N-Channel Power MOSFET
○R
CS1N60 A23H
General Description：
VDSS
600
CS1N60 A23H, the silicon N-channel Enhanced ID
0.8
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃)
3
which reduce the conduction loss, improve switching
RDS(ON)Typ
11
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is SOT-223,
which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:4nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS1N60A23H Datasheet
