CS1N60C4D Description
： VDSS 600 V CS1N60 C4D, the silicon N-channel Enhanced ID 1.5 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 32 W which reduce the conduction loss, improve switching RDS(ON)Typ 7.0 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with...