CS1N60C4D Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS1N60 C4D General Description： VDSS CS1N60 C4D, the silicon N-channel Enhanced ID VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) W which reduce the conduction loss, improve switching RDS(ON)Typ Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features ： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:7.5nC) l Low Reverse transfer capacitances(Typical:5.0pF) l 100% Single Pulse avalanche...