CS1N60C1HD Datasheet - Huajing Microelectronics

Silicon N-Channel Power MOSFET

CS1N60C1HD Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:7.5nC) l Low Reverse transfer capacitances(Typical:5.0pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter

CS1N60C1HD General Description

CS1N60C1HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.5 3 7.0 performance and enhance the avalanche energy. The transistor can be used in various power swit.

CS1N60C1HD Datasheet (815.25 KB)

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Part number:

CS1N60C1HD

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Huajing Microelectronics

File Size:

815.25 KB

Description:

Silicon n-channel power mosfet.

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CS1N60C1HD Features

CS1N60C1HD General Description

Datasheet Details

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