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CS1N65A3 - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤16Ω) l Low Gate Charge (Typical Data:3.6nC) l Low Reverse transfer capacitances(Typical:1pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS1N65A3
Manufacturer Huajing Microelectronics
File Size 532.93 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS1N65A3 Datasheet

Full PDF Text Transcription for CS1N65A3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS1N65A3. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS1N65 A3 ○R General Description： CS1N65 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology wh...

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hanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 650 0.8 20 13.8 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤16Ω) l Low Gate Charge (Typical Data:3.6nC) l Low Reverse transfer capacitances(Typical:1pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and c

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