Datasheet Details
| Part number | CS1N65A3 | 
|---|---|
| Manufacturer | Huajing Microelectronics | 
| File Size | 532.93 KB | 
| Description | Silicon N-Channel Power MOSFET | 
| Datasheet | 
        
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		  | Part number | CS1N65A3 | 
|---|---|
| Manufacturer | Huajing Microelectronics | 
| File Size | 532.93 KB | 
| Description | Silicon N-Channel Power MOSFET | 
| Datasheet | 
        
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CS1N65 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 650 0.8 20 13.8 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard.
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