CS1N65B3 datasheet by Huajing Microelectronics.
| Part number | CS1N65B3 |
|---|---|
| Datasheet | CS1N65B3-HuajingMicroelectronics.pdf |
| File Size | 524.87 KB |
| Manufacturer | Huajing Microelectronics |
| Description | Silicon N-Channel Power MOSFET |
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： CS1N65 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 650 1.5 32 8.5 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS...
View all Huajing Microelectronics datasheets
| Part Number | Description |
|---|---|
| CS1N65B1 | Silicon N-Channel Power MOSFET |
| CS1N65A1 | Silicon N-Channel Power MOSFET |
| CS1N65A3 | Silicon N-Channel Power MOSFET |
| CS1N60A1H | Silicon N-Channel Power MOSFET |
| CS1N60A3H | Silicon N-Channel Power MOSFET |
| CS1N60B1R | Silicon N-Channel Power MOSFET |
| CS1N60B3R | Silicon N-Channel Power MOSFET |
| CS1N60C1H | Silicon N-Channel Power MOSFET |
| CS1N60C1HD | Silicon N-Channel Power MOSFET |
| CS1N60C3H | Silicon N-Channel Power MOSFET |
