Click to expand full text
Silicon N-Channel Power MOSFET
CS1N65 B3
○R
General Description：
CS1N65 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD (TC=25℃) RDS(ON)Typ
650 1.5 32 8.5
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤9.5Ω) l Low Gate Charge (Typical Data:5.3nC) l Low Reverse transfer capacitances(Typical:2pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS1N65B3 Datasheet
