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CS1N65B3 Datasheet Silicon N-channel Power MOSFET

Manufacturer: Huajing Microelectronics

Overview: Silicon N-Channel Power MOSFET CS1N65 B3 ○R General.

General Description

: CS1N65 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 650 1.5 32 8.5 performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

The package form is TO-251, which accords with the RoHS standard.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤9.5Ω) l Low Gate Charge (Typical Data:5.3nC) l Low Reverse transfer capacitances(Typical:2pF) l 100% Single Pulse avalanche energy Test.

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