Datasheet Details
- Part number
- CS1N70A3H-G
- Manufacturer
- Huajing Microelectronics
- File Size
- 445.26 KB
- Datasheet
- CS1N70A3H-G-HuajingMicroelectronics.pdf
- Description
- Silicon N-Channel Power MOSFET
VDSS 700 V CS1N70 A3H-G, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 25 W which reduce the conduction loss, improve switching RDS(ON)Typ 13 Ω performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard..
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