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CS1N80A3H - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:6.7nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS1N80A3H
Manufacturer Huajing Microelectronics
File Size 409.94 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS1N80A3H Datasheet

Full PDF Text Transcription for CS1N80A3H (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS1N80A3H. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS1N80 A3H ○R General Description： CS1N80 A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology ...

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Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 800 1 30 12 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:6.7nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and c

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