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CS20N60ANH - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:61nC) l Low Reverse transfer capacitances(Typical: 20pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS20N60ANH
Manufacturer Huajing Microelectronics
File Size 437.42 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS20N60ANH Datasheet

Full PDF Text Transcription for CS20N60ANH (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS20N60ANH. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS20N60 ANH ○R General Description： CS20N60 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technolog...

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l Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 20 250 0.36 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the RoHS standard.. Features： l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:61nC) l Low Reverse transfer capacitances(Typical: 20pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adap

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