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CS20N60AND - Silicon N-Channel Power MOSFET

General Description

CS20N60AND, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • z Fast Switching z Low ON Resistance(Rdson≤0.32Ω) z Low Gate Charge (Typical Data:95nC) z Low Reverse transfer capacitances(Typical:38pF) z 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS20N60AND
Manufacturer TGW
File Size 814.69 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS20N60AND Datasheet

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Huajing Discrete Devices Silicon General Description： CS20N60AND, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the RoHS standard. R ○ N-Channel Power MOSFET CS20N60AND VDSS ID PD(TC=25℃ ) RDS(ON)Typ 600 20 280 0.23 V A W Ω Features： z Fast Switching z Low ON Resistance(Rdson≤0.32Ω) z Low Gate Charge (Typical Data:95nC) z Low Reverse transfer capacitances(Typical:38pF) z 100% Single Pulse avalanche energy Test Applications： Automotive、 DC Motor Control and Class D Amplifier.