Click to expand full text
Huajing Discrete Devices Silicon General Description：
CS20N60AND, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the RoHS standard.
R ○
N-Channel
Power MOSFET
CS20N60AND
VDSS ID PD(TC=25℃ ) RDS(ON)Typ 600 20 280 0.23 V A W Ω
Features：
z Fast Switching z Low ON Resistance(Rdson≤0.32Ω) z Low Gate Charge
(Typical Data:95nC)
z Low Reverse transfer capacitances(Typical:38pF) z 100% Single Pulse avalanche energy Test
Applications：
Automotive、 DC Motor Control and Class D Amplifier.
CS20N60AND Datasheet
