GENERAL DESCRIPTION
： CS20N60AND, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. R ○ N-Channel Power MOSFET CS20N60AND VDSS ID PD(TC=25℃ ) RDS(ON)Typ 600 20 280 0.23 V A W Ω FEATURES
： z Fast Switching z Low ON Resistance(Rdson≤0.32Ω) z Low Gate Charge (Typical Data:95nC) z Low Reverse transfer capacitances(Typical:38pF) z 100% Single Pulse avalanche energy Test APPLICATIONS
： Automotive、 DC Motor Control and Class D Amplifier. Absolute（ Tc= 25℃ unless otherwise specified） ： Symbol VDSS ID IDM a1 Parameter Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Rating 600 20 13 80 ±30 1500 250 7.1 5.0 280 2.24 6000 Units V A A A V mJ mJ A V/ns W W/℃ V VGS EAS EAR IAR a2 a1 Single Pulse Avalanche Energy Avalanche Energy ,Repetitive Avalanche Current a1 a3 dv/dt PD Peak Diode R...
