Click to expand full text
Silicon N-Channel Power MOSFET
CS20N60F A9H
○R
General Description：
CS20N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
performance and enhance the avalanche energy. The transistor can
be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard..
Features：
l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:61nC) l Low Reverse transfer capacitances(Typical: 20pF) l 100% Single Pulse avalanche energy Test
600 V 20 A 85 W 0.36 Ω
Applications：
Power switch circuit of adaptor and charger.
CS20N60FA9H Datasheet
