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Silicon N-Channel Power MOSFET
CS20N60 ANH
○R
General Description：
CS20N60 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
600 20 250 0.36
performance and enhance the avalanche energy. The transistor can
be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-3P(N), which accords with the RoHS standard..
Features：
l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:61nC) l Low Reverse transfer capacitances(Typical: 20pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS20N60ANH Datasheet
