CS24N40A8 Datasheet - Huajing Microelectronics

Silicon N-Channel Power MOSFET

CS24N40A8 Features

* l Fast Switching l Low ON Resistance(Rdson≤0.175Ω) l Low Gate Charge (Typical Data:62nC) l Low Reverse transfer capacitances(Typical:37pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Para

CS24N40A8 General Description

CS24N40 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 400 24 250 0.14 performance and enhance the avalanche energy. The transistor can be used in various power sw.

CS24N40A8 Datasheet (343.59 KB)

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CS24N40A8

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Huajing Microelectronics

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343.59 KB

Description:

Silicon n-channel power mosfet.

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CS24N40A8 Silicon N-Channel Power MOSFET Huajing Microelectronics

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CS24N40A8 Features

CS24N40A8 General Description

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