CS20J65A0-G - Silicon N-Channel Power MOSFET

HUAJING MICROELECTRONICS

General Description

CS20J65 A0-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.

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CS20J65A0-G silicon n-channel power mosfet by HUAJING MICROELECTRONICS - Datasheet Preview

Datasheet Details

Part number	CS20J65A0-G
Manufacturer	HUAJING MICROELECTRONICS
File Size	433.97 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS20J65A0-G Datasheet

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Silicon N-Channel Power MOSFET CS20J65 A0-G ○R General Description： CS20J65 A0-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-263, which accords with the RoHS standard. VDSS ID PD(TC=25℃) RDS(ON)max Features： l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： 650 V 20 A 180 W 0.