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CS24N50ANHD Datasheet - Huajing Microelectronics

Silicon N-Channel Power MOSFET

CS24N50ANHD Features

* l Fast Switching l Low ON Resistance(Rdson≤0.26Ω) l Low Gate Charge (Typical Data:96nC) l Low Reverse transfer capacitances(Typical:44pF) l 100% Single Pulse avalanche energy Test Applications: Automotive、DC Motor Control and Class D Amplifier. Absolute(Tc= 25℃ unless otherwise specified): Symbol

CS24N50ANHD General Description

CS24N50 ANHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 24 230 0.18 performance and enhance the avalanche energy. The transistor can be used in various power s.

CS24N50ANHD Datasheet (677.62 KB)

Preview of CS24N50ANHD PDF

Datasheet Details

Part number:

CS24N50ANHD

Manufacturer:

Huajing Microelectronics

File Size:

677.62 KB

Description:

Silicon n-channel power mosfet.

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CS24N50ANHD Silicon N-Channel Power MOSFET Huajing Microelectronics

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