CS2N60A4H - Silicon N-Channel Power MOSFET

Huajing Microelectronics

General Description

performance and enhance the avalanche energy.

Key Features

l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:5.4pF) l 100% Single Pulse avalanche energy Test.

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CS2N60A4H silicon n-channel power mosfet by Huajing Microelectronics - Datasheet Preview

Datasheet Details

Part number	CS2N60A4H
Manufacturer	Huajing Microelectronics
File Size	355.09 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS2N60A4H Datasheet

Full PDF Text Transcription for CS2N60A4H (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS2N60A4H. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS2N60 A4H ○R General Description： VDSS 600 V CS2N60 A4H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned p...

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N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.6 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard.. Features： l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:5.4pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of ada

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