l Fast Switching l Low ON Resistance(Rdson≤5Ω) l Low Gate Charge (Typical Data:9nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energ.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS ID IDMa1 VGS E.

VDSS 650 V CS2N65 A3HY, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.9 Ω performance and enhance the aval.

CS2N65A3

CS2N65A3R

CS2N65A3R-G

CS2N65A3RD

CS2N65A4HY

CS2N65A4R

CS2N65A8

CS2N65FA9HY

CS2N65FA9R

CS2N60

CS2N60A23H

CS2N60A3H

CS2N60A4H