CS2N65A3HY - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number	CS2N65A3HY
Manufacturer	Huajing Microelectronics
File Size	241.85 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS2N65A3HY-HuajingMicroelectronics.pdf

CS2N65A3HY Product details

Description

VDSS 650 V CS2N65 A3HY, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.9 Ω performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard..

Features

l Fast Switching l Low ON Resistance(Rdson≤5Ω) l Low Gate Charge (Typical Data:9nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |