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Silicon N-Channel Power MOSFET
○R
CS2N65 A3RD
General Description：
CS2N65 A3RD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-251, which accords with the RoHS standard.
Features：
Fast Switching
ESD Improved Capability
Low Gate Charge (Typical Data: 12nC)
Low Reverse transfer capacitances(Typical:2pF)
100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS2N65A3RD Datasheet
