CS2N65A3HY Datasheet | Huajing Microelectronics

Silicon N-Channel Power MOSFET CS2N65 A3HY ○R General Description： VDSS 650 V CS2N65 A3HY, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.9 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard.. Features ： l Fast Switching l Low ON Resistance(Rdson≤5Ω) l Low Gate Charge (Typical Data:9nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energy...