| Part | CS2N65A3HY |
|---|---|
| Description | Silicon N-Channel Power MOSFET |
| Category | MOSFET |
| Manufacturer | Huajing Microelectronics |
| Size | 241.85 KB |
： VDSS 650 V CS2N65 A3HY, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.9 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
| Part Number | Manufacturer | Description |
|---|---|---|
| CS2N65A3R-G | CR Micro | Silicon N-Channel Power MOSFET |
| CS2N65A3RD | CR Micro | Silicon N-Channel Power MOSFET |
| CS2N65A3R | CR Micro | Silicon N-Channel Power MOSFET |
| CS2N65A4R | CR Micro | Silicon N-Channel Power MOSFET |
| CS2N65A8 | HUAJING | Silicon N-Channel Power MOSFET |
