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CS2N65A3HY

Manufacturer: Huajing Microelectronics

CS2N65A3HY datasheet by Huajing Microelectronics.

CS2N65A3HY datasheet preview

CS2N65A3HY Datasheet Details

Part number CS2N65A3HY
Datasheet CS2N65A3HY-HuajingMicroelectronics.pdf
File Size 241.85 KB
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
CS2N65A3HY page 2 CS2N65A3HY page 3

CS2N65A3HY Overview

: VDSS 650 V CS2N65 A3HY, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.9 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the...

CS2N65A3R from other manufacturers

View CS2N65A3R datasheet index

Brand Logo Part Number Description Other Manufacturers
CR Micro Logo CS2N65A3R Silicon N-Channel Power MOSFET CR Micro
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CR Micro Logo CS2N65A3RD Silicon N-Channel Power MOSFET CR Micro
Huajing Microelectronics logo - Manufacturer

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