CS2N65A8 Datasheet | HUAJING

Description ： CS2N65 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the Ro HS standard.. Features ： l Fast Switching l Low ON Resistance(Rdson≤5Ω) l Low Gate Charge (Typical Data:9n C) l Low Reverse transfer capacitances(Typical:6p F) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： VDSS ID PD (TC=25℃) RDS(ON)Typ ○R CS2N65 A8 650 V 2A 35 W 3.9 Ω Symbol VDSS IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 TJ，Tstg TL Parameter Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy ,Repetitive Avalanche Current Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering Rating 650 2.0 1.45 8 ±30 68 6.4 1.1 5 35 0.28 150，- 55 to 150 300 Units V A A A V m J m J A V/ns W W/℃ ℃ ℃ WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2012 Huajing Discrete Devices ○R CS2N65 A8 Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS ΔBVDSS/ΔTJ IDSS IGSS(F) IGSS(R) Drain to Source Breakdown Voltage Bvdss Temperature Coefficient Drain to Source Leakage Current Gate to Source Forward Leakage Gate to Source Reverse...