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Huajing Discrete Devices Silicon General Description：
CS2N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard..
R ○
N-Channel
Power MOSFET
CS2N60F A9H
VDSS ID PD (TC=25℃ ) RDS(ON)Typ 600 2 24 3.6 V A W Ω
Features：
l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge
(Typical Data:8.5nC)
l Low Reverse transfer capacitances(Typical:5.4pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS2N60F Datasheet
