CS2N60F Datasheet | HUAJING

Description ： CS2N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the Ro HS standard.. R ○ N-Channel Power MOSFET CS2N60F A9H VDSS ID PD (TC=25℃ ) RDS(ON)Typ 600 2 24 3.6 V A W Ω Features ： l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge (Typical Data:8.5n C) l Low Reverse transfer capacitances(Typical:5.4p F) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（ Tc= 25℃ unless otherwise specified） ： Symbol VDSS ID IDM VGS EAS EAR IAR a1 Parameter Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Rating 600 2.0 1.45 8.0 ±30 80 6.4 1.1 5 24 0.192 150， - 55 to 150 300 Units V A A A V m J m J A V/ns W W/℃ ℃ ℃ a2 a1 Single Pulse Avalanche Energy Avalanche Energy ,Repetitive Avalanche Current a1 a3 dv/dt PD Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25 °C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering TJ， Tstg TL W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 1 of 10 F r e e D a t a s Huajing Discrete Devices Electrical Characteristics（ Tc= 25℃ unless otherwise specified） ： OFF Characteristics Symbol VDSS Δ BVDSS/Δ TJ IDSS IGSS(F) IGSS(R) Parameter Drain to Source Breakdown Voltage Bvdss Temperature Coefficient Drain to Source Leakage Current Gate to Source Forward Leakage Gate to Source Reverse Leakage R ○ CS2N60F A9H Test Conditions Min. V GS =0V, I D =250 µ A ID=250u A,Reference25 ℃ V DS = 600V, VGS = 0V, T a = 25 ℃ V DS =480V, V GS = 0V, T a = 125 ℃ V GS = 30V V GS...