CS2N70A3R1-G - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number	CS2N70A3R1-G
Manufacturer	Huajing Microelectronics
File Size	188.63 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS2N70A3R1-G-HuajingDiscreteDevices.pdf

CS2N70A3R1-G Product details

Description

VDSS 700 V CS2N70 A3R1-G, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 4.7 Ω performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤6.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:3.8pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |