l Fast Switching l Low ON Resistance(Rdson≤0.085Ω) l Low Gate Charge (Typical Data:123nC) l Low Reverse transfer capacitances(Typical:82pF) l 100% Single Pulse avalanche energy Test
300 38.5 290 0.045
V A W Ω.
Full PDF Text Transcription for CS38N30AN (Reference)
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Silicon N-Channel Power MOSFET CS38N30 AN ○R General Description： CS38N30 AN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology ...
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Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3PN, which accords with the RoHS standard.. Features： l Fast Switching l Low ON Resistance(Rdson≤0.085Ω) l Low Gate Charge (Typical Data:123nC) l Low Reverse transfer capacitances(Typical:82pF) l 100% Single Pulse avalanche energy Test 300 38.5 290 0.045 V A W Ω Applications： Power switch circui
CS38N30AN Datasheet
