CS3N90 A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Key Features
l Fast Switching l Low ON Resistance(Rdson≤5.5Ω) l Low Gate Charge (Typical Data:16nC) l Low Reverse transfer capacitances(Typical:6.5pF) l 100% Single Pulse avalanche energy Test
VDSS ID PD(TC=25℃) RDS(ON)Typ
900 V 3A 75 W 5Ω.
Full PDF Text Transcription for CS3N90A3H (Reference)
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Silicon N-Channel Power MOSFET CS3N90 A3H ○R General Description： CS3N90 A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology ...
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Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤5.5Ω) l Low Gate Charge (Typical Data:16nC) l Low Reverse transfer capacitances(Typical:6.5pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 900 V 3A 75 W 5Ω Applications： Automotive、DC Motor Control and C
CS3N90A3H Datasheet
