Click to expand full text
Silicon N-Channel Power MOSFET
○R
CS3N90 A3H1-G
General Description：
VDSS
900
CS3N90 A3H1-G, the silicon N-channel Enhanced ID
3
VDMOSFETs, is obtained by the self-aligned planar Technology
PD(TC=25℃)
75
which reduce the conduction loss, improve switching
RDS(ON)Typ
5
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-251, which accords with the RoHS standard.
Features：
Fast Switching
Low ON Resistance(Rdson≤5.5Ω)
Low Gate Charge (Typical Data:16nC)
Low Reverse transfer capacitances(Typical:6.5pF)
100% Single Pulse avalanche energy Test
Applications：
Automotive、DC Motor Control and Class D Amplifier.
CS3N90A3H1-G Datasheet
