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CS3N90A3H1-G - Silicon N-Channel Power MOSFET

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Part number CS3N90A3H1-G
Manufacturer CR Micro
File Size 927.93 KB
Description Silicon N-Channel Power MOSFET
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Description

VDSS 900 CS3N90 A3H1-G, the silicon N-channel Enhanced ID 3 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 75 which reduce the conduction loss, improve switching RDS(ON)Typ 5 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard.

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