CS3N90A3H1-G Overview
： VDSS 900 CS3N90 A3H1-G, the silicon N-channel Enhanced ID 3 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 75 which reduce the conduction loss, improve switching RDS(ON)Typ 5 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS...
CS3N90A3H1-G Key Features
- Fast Switching
- Low ON Resistance(Rdson≤5.5Ω)
- Low Gate Charge (Typical Data:16nC)
- Low Reverse transfer capacitances(Typical:6.5pF)
- 100% Single Pulse avalanche energy Test