CS3N90A3H1-G Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS3N90 A3H1-G General Description： VDSS CS3N90 A3H1-G, the silicon N-channel Enhanced ID VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 75 which reduce the conduction loss, improve switching RDS(ON)Typ 5 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features ： - Fast Switching - Low ON Resistance(Rdson≤5.5Ω) - Low Gate Charge (Typical Data:16nC) - Low Reverse transfer capacitances(Typical:6.5pF) - 100% Single Pulse avalanche...