CS3N06AS-G Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS3N06 AS-G General Description： CS3N06 AS-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a battery protect or in other applications. The package form is SOT-23, which accords with the RoHS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤ 105mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： LED、electric tools Absolute（TA= 25℃ unless otherwise specified） Symbol...