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CS4N60FA9TDY - Silicon N-Channel Power MOSFET

General Description

avalanche energy.

Key Features

  • l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical: 2.2pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS4N60FA9TDY
Manufacturer Huajing Microelectronics
File Size 344.09 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS4N60FA9TDY Datasheet

Full PDF Text Transcription for CS4N60FA9TDY (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS4N60FA9TDY. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS4N60F A9TDY ○R General Description： CS4N60F A9TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Techn...

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annel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical: 2.2pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.

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