l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical: 2.2pF) l 100% Single Pulse avalanche energ.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS4N65 A3TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po.

CS4N65A3HD

CS4N65A3HDY

CS4N65A3R

CS4N65A4D

CS4N65A4HDY

CS4N65A4R

CS4N65A4TDY

CS4N65A8HD

CS4N65A8RZ-G

CS4N65ARR

CS4N65FA9HD

CS4N65FA9R

CS4N65FA9R-G