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CS4N65A3HD - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • z Fast Switching z ESD Improved Capability z Low Gate Charge (Typical Data: 13nC) z Low Reverse transfer capacitances(Typical: 4.2pF) z 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS4N65A3HD
Manufacturer HUAJING
File Size 347.26 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS4N65A3HD Datasheet

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Full PDF Text Transcription (Reference)

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Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS4N65A3HD General Description： CS4N65A3HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： z Fast Switching z ESD Improved Capability z Low Gate Charge (Typical Data: 13nC) z Low Reverse transfer capacitances(Typical: 4.2pF) z 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.