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CS4N65A4D - Silicon N-Channel Power MOSFET

General Description

CS4N65 A4D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 650 V 4 A 75 W 2 Ω.

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Datasheet Details

Part number CS4N65A4D
Manufacturer HUAJING
File Size 232.29 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS4N65A4D Datasheet

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Silicon N-Channel Power MOSFET ○R CS4N65 A4D General Description： CS4N65 A4D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 650 V 4 A 75 W 2 Ω Applications： Power switch circuit of adaptor and charger.