CS4N65A8RZ-G Overview
Description
： CS4N65 A8RZ-G the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
Key Features
- Fast Switching
- Low ON Resistance(Rdson≤2.8Ω)
- Low Gate Charge (Typical Data: 14.5nC)
- Low Reverse transfer capacitances(Typical:3.5pF)
- 100% Single Pulse avalanche energy Test
