| Part | CS4N65A3HDY |
|---|---|
| Description | Silicon N-Channel Power MOSFET |
| Category | MOSFET |
| Manufacturer | Huajing Microelectronics |
| Size | 352.67 KB |
： CS4N65 A3HDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 4 75 2 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
| Part Number | Manufacturer | Description |
|---|---|---|
| CS4N65A3HD | HUAJING | Silicon N-Channel Power MOSFET |
| CS4N65A8RZ-G | CR Micro | Silicon N-Channel Power MOSFET |
| CS4N65A4D | HUAJING | Silicon N-Channel Power MOSFET |
| CS4N65ARR | CR Micro | Silicon N-Channel Power MOSFET |
| CS4N65FA9HD | HUAJING | Silicon N-Channel Power MOSFET |