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CS4N65A4HDY - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS4N65A4HDY
Manufacturer Huajing Microelectronics
File Size 595.65 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS4N65A4HDY Datasheet

Full PDF Text Transcription for CS4N65A4HDY (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS4N65A4HDY. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS4N65 A4HDY ○R General Description： CS4N65 A4HDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technol...

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nel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.

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