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CS4N65FA9R-G

Manufacturer: Huajing Microelectronics

CS4N65FA9R-G datasheet by Huajing Microelectronics.

CS4N65FA9R-G datasheet preview

CS4N65FA9R-G Datasheet Details

Part number CS4N65FA9R-G
Datasheet CS4N65FA9R-G-HuajingMicroelectronics.pdf
File Size 263.49 KB
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
CS4N65FA9R-G page 2 CS4N65FA9R-G page 3

CS4N65FA9R-G Overview

: CS4N65F A9R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.

CS4N65FA9HD from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
HUAJING Logo CS4N65FA9HD Silicon N-Channel Power MOSFET HUAJING
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