CS730A3RD - Silicon N-Channel Power MOSFET

Huajing Microelectronics

General Description

and enhance the avalanche energy.

Key Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test.

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CS730A3RD silicon n-channel power mosfet by Huajing Microelectronics - Datasheet Preview

Datasheet Details

Part number	CS730A3RD
Manufacturer	Huajing Microelectronics
File Size	198.79 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS730A3RD Datasheet

Full PDF Text Transcription for CS730A3RD (Reference)

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Silicon N-Channel Power MOSFET CS730 A3RD ○R General Description： CS730 A3RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology ...

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Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor.

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