CS730FA9H - Silicon N-Channel Power MOSFET

Huajing Microelectronics

General Description

and enhance the avalanche energy.

Key Features

l Fast Switching l Low ON Resistance(Rdson≤1Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test.

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CS730FA9H silicon n-channel power mosfet by Huajing Microelectronics - Datasheet Preview

Datasheet Details

Part number	CS730FA9H
Manufacturer	Huajing Microelectronics
File Size	221.80 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS730FA9H Datasheet

Full PDF Text Transcription for CS730FA9H (Reference)

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Silicon N-Channel Power MOSFET CS730F A9H ○R General Description： CS730F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology ...

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Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤1Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor.

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