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CS7N65A4TDY - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS7N65A4TDY
Manufacturer Huajing Microelectronics
File Size 758.83 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS7N65A4TDY Datasheet

Full PDF Text Transcription for CS7N65A4TDY (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS7N65A4TDY. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS7N65 A4TDY ○R General Description： CS7N65 A4TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technol...

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nel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 7 95 1.1 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and cha

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