CS7N80F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Key Features
l Fast Switching l Low ON Resistance(Rdson≤1.8Ω ) l Low Gate Charge (Typical Data:34nC) l Low Reverse transfer capacitances(Typical:12pF) l 100% Single Pulse avalanche energy Test.
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Silicon N-Channel Power MOSFET CS7N80F A9 ○R General Description： CS7N80F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology ...
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Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. VDSS ID PD(TC=25℃) RDS(ON)Typ 800 V 7A 48 W 1.5 Ω Features： l Fast Switching l Low ON Resistance(Rdson≤1.8Ω ) l Low Gate Charge (Typical Data:34nC) l Low Reverse transfer capacitances(Typical:12pF) l 100% Single Pulse avalanche energy Test Applications： ATX Power、LED Power.
CS7N80FA9 Datasheet
