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CS830A4RD Datasheet, MOSFET, Huajing Microelectronics

CS830A4RD Datasheet, MOSFET, Huajing Microelectronics

CS830A4RD

datasheet Download (Size : 254.35KB)

CS830A4RD Datasheet
CS830A4RD

datasheet Download (Size : 254.35KB)

CS830A4RD Datasheet

CS830A4RD Features and benefits

CS830A4RD Features and benefits

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energ.

CS830A4RD Application

CS830A4RD Application

Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter Rating .

CS830A4RD Description

CS830A4RD Description

CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 5 75 1.25 performance and enhance the avalanche energy. .

Image gallery

CS830A4RD Page 1 CS830A4RD Page 2 CS830A4RD Page 3

TAGS

CS830A4RD
Silicon
N-Channel
Power
MOSFET
Huajing Microelectronics

Manufacturer


Huajing Microelectronics

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