CS830A4RD Datasheet, Mosfet, Huajing Microelectronics

CS830A4RD Features

• Mosfet l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test Applicat

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Part number:

CS830A4RD

Manufacturer:

Huajing Microelectronics

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254.35kb

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction

CS830A4RD Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 V

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CS830A4RD

Huajing Microelectronics

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