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CS830F - N-CHANNEL MOSFET

Key Features

  • Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 500 V ID(Tc=25℃) 5.0 A ID(Tc=100℃) 3.0 A IDM 20 A VGSS ±30 V IAR 4.5 A EAS 292 mJ EAR 8.75 mJ PD(Tc=25℃) 38 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=500V VDS=400V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=2.5A gFS VDS=40V ID=2.5A VSD V.

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Datasheet Details

Part number CS830F
Manufacturer LZG
File Size 294.02 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet CS830F Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFS830(CS830F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,,。 Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 500 V ID(Tc=25℃) 5.0 A ID(Tc=100℃) 3.0 A IDM 20 A VGSS ±30 V IAR 4.5 A EAS 292 mJ EAR 8.75 mJ PD(Tc=25℃) 38 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=500V VDS=400V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=2.5A gFS VDS=40V ID=2.5A VSD VGS=0V IS=5.0A Ciss Coss VDS=25V VGS=0V f=1.0MHz Crss td(on) tr td(off) VDD=250V ID=4.